IRF1404Z - N-Channel MOSFET

Kexin Semiconductor

Features

s.
VDS (V) = 40V.
ID = 75 A (VGS = 10V).
RDS(ON) ＜ 3.7mΩ (VGS = 10V).
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax (1.70) 1.30 ± 0.10 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 9.20 ± 0.20 (1.46) (45 ) 13.08 ± 0.20 (1.00) 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 2.80 ± 0.10 10.08 ± 0.30 MOSFET 4.50 ± 0.20 1.30 +0.10.
0.05 0.50 +0.10.

Published: Dec 17, 2025 |