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SMD Type
HEXFET Power MOSFET KRF7205(IRF7205)
Features
Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching
MOSFIECT
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V @ TA = 25
ID
Continuous Drain Current, VGS @ 10V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
Maximum Junction-to-Ambient *3
R JA
Junction and Storage Temperature Range
TJ, TSTG
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -4.6A, di/dt 90A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating -4.6 -3.7 -15 2.5 0.
IRF7205 Datasheet
