Datasheet4U Logo Datasheet4U.com

IRF7476 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 12V.
  • ID = 15 A (VGS = 10V).
  • RDS(ON) ＜ 8mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 30mΩ (VGS = 2.8V) SOP-8 +0.04 0.21 -0.02 S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Linear Derating Factor Single Pulse Avalanche En.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7476 Power MOSFET International Rectifier
IRF7476PBF Power MOSFET International Rectifier
IRF7470 Power MOSFET International Rectifier
IRF7470PBF Power MOSFET International Rectifier
IRF7471 Power MOSFET International Rectifier

Other Datasheets by Kexin Semiconductor

Part Number Description
IRF7205 Power MOSFET
IRF730S N-Channel MOSFET
IRF7805Z N-Channel Enhancement MOSFET
IRF7855 N-Channel MOSFET
IRF1404Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET IRF7476 (KRF7476) ■ Features ● VDS (V) = 12V ● ID = 15 A (VGS = 10V) ● RDS(ON) ＜ 8mΩ (VGS = 4.5V) ● RDS(ON) ＜ 30mΩ (VGS = 2.8V) SOP-8 +0.04 0.21 -0.02 S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM IAR PD EAS RthJA RthJC TJ Tstg Rating 12 ±12 15 12 120 12 2.5 1.6 0.