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2KK5130 - N-Channel MOSFET

Key Features

  • VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4.0m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V) D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage VDS Spike Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Lead Junction Temperat.

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SMD Type N-Channel MOSFET 2KK5130 Features VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4.0m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V) D +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage VDS Spike Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range 100ns TA=25 TA=70 L=0.1mH TA=25 TA=70 t 10s Steady-State Symbol VDS VGS VSPIKE ID IDM IAS EAS PD RthJA RthJL TJ Tstg Rating 30 ±20 36 23 14 174 37 68 3.1 1.2 40 75 24 150 -55 to 150 Unit V V A mJ W /W www.kexin.com.