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CJP12N65 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet preview – CJP12N65

Datasheet Details

Part number CJP12N65
Manufacturer JCET
File Size 856.43 KB
Description N-Channel MOSFET
Datasheet download datasheet CJP12N65 Datasheet
Additional preview pages of the CJP12N65 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP12N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 0.85Ω@10V 12A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3.
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