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IRLU3410 - HEXFET Power MOSFET

Download the IRLU3410 datasheet PDF. This datasheet also covers the IRLR3410 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3410_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3410 N-Channel MOSFET INCHANGE
IRLU3410PbF Power MOSFET Infineon
IRLU3103 N-Channel MOSFET INCHANGE
IRLU3105 N-Channel MOSFET INCHANGE
IRLU3110Z N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3410PBF Power MOSFET
IRLU3103 Power MOSFET
IRLU3105 HEXFET Power MOSFET
IRLU3105PBF HEXFET Power MOSFET
IRLU3110ZPBF Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3410) l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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