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IRLU3105PBF - HEXFET Power MOSFET

Download the IRLU3105PBF datasheet PDF. This datasheet also covers the IRLR3105PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D IRLR3105PbF IRLU3105PbF ® VDSS = 55V RDS(on) = 0.037Ω G S ID = 25A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3105PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3105 N-Channel MOSFET INCHANGE
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IRLU3110Z N-Channel MOSFET INCHANGE
IRLU3114Z N-Channel MOSFET INCHANGE
IRLU3303 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3105 HEXFET Power MOSFET
IRLU3103 Power MOSFET
IRLU3110ZPBF Power MOSFET
IRLU3114ZPbF Power MOSFET
IRLU3303 Power MOSFET

Full PDF Text Transcription

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PD - 95553A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D IRLR3105PbF IRLU3105PbF ® VDSS = 55V RDS(on) = 0.037Ω G S ID = 25A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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