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IRLU3110ZPBF - Power MOSFET

Download the IRLU3110ZPBF datasheet PDF. This datasheet also covers the IRLR3110ZPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRLU3110ZPbF HEXFET® Power MOSFET D VDSS = 100V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3110ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3110Z N-Channel MOSFET INCHANGE
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IRLU3105 N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3114ZPbF Power MOSFET
IRLU3103 Power MOSFET
IRLU3105 HEXFET Power MOSFET
IRLU3105PBF HEXFET Power MOSFET
IRLU3303 Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD - 97175A AUTOMOTIVE MOSFET IRLR3110ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRLU3110ZPbF HEXFET® Power MOSFET D VDSS = 100V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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