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IRLU3105 - HEXFET Power MOSFET

Download the IRLU3105 datasheet PDF. This datasheet also covers the IRLR3105 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.037Ω ID = 25A S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3105-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3105 N-Channel MOSFET INCHANGE
IRLU3103 N-Channel MOSFET INCHANGE
IRLU3110Z N-Channel MOSFET INCHANGE
IRLU3114Z N-Channel MOSFET INCHANGE
IRLU3303 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3105PBF HEXFET Power MOSFET
IRLU3103 Power MOSFET
IRLU3110ZPBF Power MOSFET
IRLU3114ZPbF Power MOSFET
IRLU3303 Power MOSFET

Full PDF Text Transcription

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PD - 94510B AUTOMOTIVE MOSFET IRLR3105 IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.037Ω ID = 25A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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