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IRLU3410PbF - Power MOSFET

Download the IRLU3410PbF datasheet PDF. This datasheet also covers the IRLR3410PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • Logic Level Gate Drive.
  • Ultra Low On-Resistance.
  • Surface Mount (IRLR3410).
  • Straight Lead (IRLU3410).
  • Advances Process Technology.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3410PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3410PBF Power MOSFET International Rectifier
IRLU3410 HEXFET Power MOSFET International Rectifier
IRLU3410 N-Channel MOSFET INCHANGE
IRLU3103 Power MOSFET International Rectifier
IRLU3103 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IRL100HS121 MOSFET
IRL3705NPbF Power MOSFET
IRL3803PBF MOSFET
IRL40DM247 MOSFET
IRL40SC209 Power MOSFET

Full PDF Text Transcription

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IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances Process Technology • Fast Switching • Fully Avalanche Rated • Lead-Free Description Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications.
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