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IRHM8260 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM8230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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www.datasheet4u.com PD - 91332D RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA) Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY ™ IRHM7260 JANSR2N7433 200V, N-CHANNEL QPL Part Number JANSR2N7433 JANSF2N7433 JANSG2N7433 JANSH2N7433 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).