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IRHM8250 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com PD - 90674C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A IRHM7250 JANSR2N7269 200V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 1000K Rads (Si) 0.10 Ω HEXFET® TO-254AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).