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IRHM8054 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM8064 (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL
IRHM8130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8160 (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com PD - 90887E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRHM7054 IRHM3054 IRHM4054 IRHM8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.027Ω 0.027Ω 0.027Ω 0.027Ω ID 35*A 35*A 35*A 35*A IRHM7054 JANSR2N7394 60V, N-CHANNEL REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7394 JANSF2N7394 JANSG2N7394 JANSH2N7394 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).