Datasheet4U Logo Datasheet4U.com

IRHM8160 - (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

Download the IRHM8160 datasheet PDF. This datasheet also covers the IRHM7160 variant, as both devices belong to the same (irhm7160 / irhm8160) repetitive avalanche and dv/dt rated hexfet transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM7160_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRHM2C50SE N-Channel Transistor IRF
IRHM53260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM54260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM57260 Power MOSFET IRF
IRHM57260SE Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM8130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8064 (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL
IRHM8230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91331B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.045Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.