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IRHM8150 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM8130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8160 (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8064 (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL
IRHM8230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.065Ω 0.065Ω 0.065Ω 0.065Ω REF: MIL-PRF-19500/603 ® RAD Hard ™ HEXFET TECHNOLOGY IRHM7150 JANSR2N7268 100V, N-CHANNEL ID 34A 34A 34A 34A QPL Part Number JANSR2N7268 JANSF2N7268 JANSG2N7268 JANSH2N7268 TO-254AA International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).