IRH8250 Datasheet PDF - International Rectifier (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR Specs

IRH8250 - (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

This page provides the datasheet information for the IRH8250, a member of the IRH7250 (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR family.

Datasheet Summary

Features

n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T ST.

Datasheet Details

Part number	IRH8250
Manufacturer	International Rectifier
File Size	310.00 KB
Description	(IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
Datasheet	IRH8250 Datasheet
Additional preview pages of the IRH8250 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 90697B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.11Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.

Published: Dec 7, 2006 |