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IRH7230 - Radiation Hardened Power MOSFET

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Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Datasheet Details

Part number IRH7230
Manufacturer International Rectifier
File Size 462.50 KB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRH7230 Datasheet
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www.DataSheet4U.com PD - 91801B RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-204AA/AE) Product Summary Part Number IRH7230 IRH3230 IRH4230 IRH8230 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) R DS(on) 0.40 Ω 0.40 Ω 0.40 Ω 0.40 Ω ID 9.0A 9.0A 9.0A 9.0A IRH7230 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-204AE International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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