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IRH7130 - RADIATION HARDENED POWER MOSFET

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Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Datasheet Details

Part number IRH7130
Manufacturer International Rectifier
File Size 489.78 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRH7130 Datasheet
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www.DataSheet4U.com PD - 90676D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE) Product Summary Part Number IRH7130 IRH3130 IRH4130 IRH8130 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18 Ω ID 14A 14A 14A 14A IRH7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-204AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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