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IRH7450 - (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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Features

  • n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T ST.

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Datasheet Details

Part number IRH7450
Manufacturer International Rectifier
File Size 327.89 KB
Description (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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www.DataSheet4U.com PD - 91807A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 500Volt, 0.45Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
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