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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 μS short Circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package
Benefits
• High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation
PD - 97406A
IRG7PSH73K10PbF
C
G E
n-channel
VCES = 1200V IC(Nominal) = 75A tSC ≥ 10μs, TJ(max) =175°C VCE(on) typ. = 2.
IRG7PSH73K10PbF Datasheet
