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IRG7PSH50UDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) trench IGBT technology.
  • Low switching losses C.
  • Square RBSOA.
  • 100% of the parts tested for ILM .
  • Positive VCE (ON) temperature co-efficient.
  • Ultra fast soft recovery co-pak diode G.
  • Tight parameter distribution.
  • Lead-Free Benefits E n-channel.
  • High efficiency in a wide range of.

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Full PDF Text Transcription

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PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses C • Square RBSOA • 100% of the parts tested for ILM  • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode G • Tight parameter distribution • Lead-Free Benefits E n-channel • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S. • Welding • Solar Inverter • Induction Heating G Gate VCES = 1200V I NOMINAL = 50A TJ(max) = 150°C VCE(on) typ. = 1.
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