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IRG7PH42UDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG7PH42UDPbF datasheet PDF. This datasheet also covers the IRG7PH42UD-EP variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits.
  • High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PH42UD-EP_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.7V C Applications • • • • U.P.S.
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