Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
G E
TJ(max) = 150°C
n-channel
C
VCE(on) typ. = 1.7V
Benefits.
Device optimized for induction heating and soft switching.
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PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH42UD1PbF IRG7PH42UD1-EP
VCES = 1200V I NOMINAL = 30A
Features
• • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
G E
TJ(max) = 150°C
n-channel
C
VCE(on) typ. = 1.
IRG7PH42UD1-EP Datasheet
