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IRG7PH42UD1PbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG7PH42UD1PbF datasheet PDF. This datasheet also covers the IRG7PH42UD1-EP variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.7V Benefits.
  • Device optimized for induction heating and soft switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PH42UD1-EP_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.
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