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IRG7PH42UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
VCES = 1200V IC = 45A, TC = 100°C
G E
TJ(max) = 150°C VCE(on) typ. = 1.
IRG7PH42UD1MPBF Datasheet
