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PD - 97391B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH42UDPbF IRG7PH42UD-EP
C
VCES = 1200V IC = 45A, TC = 100°C
G E
TJ(max) = 150°C
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.7V
C
Applications
• • • • U.P.S.
IRG7PH42UD-EP Datasheet
