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IRF661TRPbF - MOSFET

Download the IRF661TRPbF datasheet PDF. This datasheet also covers the IRF6612PbF variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • RF6612PbF Current Regulator Same Type as D. U. T. 50KΩ 12V .2µF .3µF D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L VRGGS 20V tp D. U. T IAS 0.01Ω DRIVER + - VDD A Fig 15a. Unclamped Inductive Test Circuit LD VDS + VDD - VGS Pulse Width < 1µs Duty Factor < 0.1% D. U. T Fig 16a. Switching Time Test Circuit 6 V(BR)DSS tp IAS Fig 15b. Unclamped Inductive W.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6612PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6610 HEXFET Power MOSFET Silicon Technology
IRF6611 DirectFET Power MOSFET
IRF6611PbF DirectFET Power MOSFET
IRF6611TRPbF DirectFET Power MOSFET
IRF6612 HEXFET Power MOSFET

Full PDF Text Transcription

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RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques PD - 97215 IRF6612PbF IRF661TRPbF DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 30nC 10nC 2.9nC 8.1nC 18nC 1.8V Applicable DirectFET Package/Layout Pad (see p.
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