Datasheet4U Logo Datasheet4U.com

PTFB213208FV - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 IMD Up -35 30 25 -40 IMD Low -45 -50 -55 20.

📥 Download Datasheet

Datasheet Details

Part number PTFB213208FV
Manufacturer Infineon
File Size 222.91 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB213208FV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFB201402FC High Power RF LDMOS Field Effect Transistor Wolfspeed
PTFB241402F High Power RF LDMOS Field Effect Transistor Infineon Technologies
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB183408SV High Power RF LDMOS Field Effect Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
PTFB213004F High Power RF LDMOS Field Effect Transistor
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.
Published: |