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PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.

Features

  • include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW 24 Gain 20 60 40 16 Efficiency 12 20 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 -60ptfb091802fc_g1 30 3.

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Datasheet Details

Part number PTFB091802FC
Manufacturer Infineon
File Size 352.65 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB091802FC Datasheet

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Full PDF Text Transcription

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PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW 24 Gain 20 60 40 16 Efficiency 12 20 0 8 PAR @ 0.
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