Datasheet4U Logo Datasheet4U.com

PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 20.5 Gain 20.0 19.5 19.0 18.5 18.0 41 Efficiency 43 45 47 49 51 Output Power (dBm) 70 60 50 40 30 20 10 53 Features.
  • Broadband i.

📥 Download Datasheet

Datasheet Details

Part number PTFB091507FH
Manufacturer Infineon
File Size 473.18 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB091507FH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB183408SV High Power RF LDMOS Field Effect Transistor Infineon Technologies
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs Infineon Technologies

Other Datasheets by Infineon

Part Number Description
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 20.5 Gain 20.0 19.5 19.0 18.5 18.
Published: |