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IPB156N22NFD - MOSFET

Description

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Features

  • N-channel, normal level.
  • Fast Diode (FD) with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB156N22NFD
Manufacturer Infineon
File Size 0.96 MB
Description MOSFET
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IPB156N22NFD MOSFET OptiMOSTMFDPower-Transistor,220V Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 220 V RDS(on),max 15.6 mΩ ID 72 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB156N22NFD Package PG-TO 263-3 Marking 156N22NF RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD TableofContents Description . . . . . . . . . . . . . .
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