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IPB108N15N3 - Power-Transistor

This page provides the datasheet information for the IPB108N15N3, a member of the IPB108N15N3G Power-Transistor family.

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen free.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB108N15N3
Manufacturer Infineon
File Size 736.14 KB
Description Power-Transistor
Datasheet download datasheet IPB108N15N3 Datasheet
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Full PDF Text Transcription

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IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.
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