IPB156N22NFD - N-Channel MOSFET

Datasheet Summary

Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IPB156N22NFD
Manufacturer	INCHANGE
File Size	204.20 KB
Description	N-Channel MOSFET
Datasheet	IPB156N22NFD Datasheet
Additional preview pages of the IPB156N22NFD datasheet.

📁 Similar Datasheet

IPB156N22NFD - MOSFET (Infineon)
IPB15N03L - N-Channel MOSFET (Infineon Technologies AG)
IPB100N04S2-04 - Power-Transistor (Infineon Technologies)
IPB100N04S2L-03 - Power-Transistor (Infineon Technologies)
IPB100N04S3-03 - OptiMOS-T Power-Transistor (Infineon Technologies)
IPB100N04S4-H2 - OptiMOS-T2 Power-Transistor (Infineon Technologies)
IPB100N06S2-05 - Power-Transistor (Infineon Technologies)
IPB100N06S2L-05 - Power-Transistor (Infineon Technologies)
IPB100N06S3-03 - Power-Transistor (Infineon Technologies)
IPB100N06S3L-03 - Power-Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

IPB107N20N3 - N-Channel MOSFET
IPB107N20NA - N-Channel MOSFET
IPB108N15N3G - N-Channel MOSFET
IPB110N20N3LF - N-Channel MOSFET
IPB117N20NFD - N-Channel MOSFET
IPB123N10N3G - N-Channel MOSFET
IPB12CN10NG - N-Channel MOSFET
IPB144N12N3G - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB156N22NFD ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 220 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 72 56 288 PD Total Dissipation @TC=25℃ 300 Tch Max.

Published: Sep 3, 2020 |