IPB107N20N3 - Power-Transistor

This page provides the datasheet information for the IPB107N20N3, a member of the IPB107N20N3G Power-Transistor family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPB107N20N3
Manufacturer	Infineon
File Size	629.28 KB
Description	Power-Transistor
Datasheet	IPB107N20N3 Datasheet
Additional preview pages of the IPB107N20N3 datasheet.

📁 Similar Datasheet

IPB107N20N3 - N-Channel MOSFET (INCHANGE)
IPB107N20N3G - Power-Transistor (Infineon Technologies)
IPB107N20NA - N-Channel MOSFET (INCHANGE)
IPB100N04S2-04 - Power-Transistor (Infineon Technologies)
IPB100N04S2L-03 - Power-Transistor (Infineon Technologies)
IPB100N04S3-03 - OptiMOS-T Power-Transistor (Infineon Technologies)
IPB100N04S4-H2 - OptiMOS-T2 Power-Transistor (Infineon Technologies)
IPB100N06S2-05 - Power-Transistor (Infineon Technologies)
IPB100N06S2L-05 - Power-Transistor (Infineon Technologies)
IPB100N06S3-03 - Power-Transistor (Infineon Technologies)

Other Datasheets by Infineon

IPB107N20NA - Power-Transistor
IPB100P03P3L-04 - Power-Transistor
IPB108N15N3 - Power-Transistor
IPB110N06L - Power-Transistor
IPB110N20N3LF - MOSFET
IPB114N03LG - Power-Transistor
IPB117N20NFD - MOSFET
IPB120N03S4L-03 - Power-Transistor

Full PDF Text Transcription

Click to expand full text

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.

Published: Sep 30, 2020 |