IPB117N20NFD - MOSFET

Datasheet Summary

Features

N-channel, normal level.
Fast Diode (FD) with reduced Qrr.
Optimized for hard commutation ruggedness.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC 1) for target.

Infineon

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Datasheet Details

Part number	IPB117N20NFD
Manufacturer	Infineon
File Size	0.96 MB
Description	MOSFET
Datasheet	IPB117N20NFD Datasheet
Additional preview pages of the IPB117N20NFD datasheet.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,200V IPB117N20NFD DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.

Published: Dec 15, 2016 |