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IPB035N10NF2S - MOSFET

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1 Maximum ratings 3 T

Features

  • Optimized for a wide range of.

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Datasheet Details

Part number IPB035N10NF2S
Manufacturer Infineon
File Size 880.86 KB
Description MOSFET
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Public IPB035N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG Key performance parameters Value Unit 100 V 3.5 mΩ 151 A 89 nC 69 nC D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Part number IPB035N10NF2S Package PG‑TO263‑3 Marking 035N10NS Related links ‑ Datasheet https://www.infineon.com 1 Revision 1.0 2025‑01‑20 Public StrongIRFET™ 2 Power‑Transistor, 100 V IPB035N10NF2S Table of contents Description . . . . . . . . . . . . . . . . . . . .
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