IPB035N08N3G - N-Channel MOSFET

Datasheet Summary

Features

With TO-263( D²PAK ) packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPB035N08N3G
Manufacturer	INCHANGE
File Size	225.12 KB
Description	N-Channel MOSFET
Datasheet	IPB035N08N3G Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 PD Total Dissipation @TC=25℃ 214 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.7 ℃/W IPB035N08N3G isc website：www.iscsemi.

Published: Oct 28, 2020 |