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IPB031NE7N3 - Power Transistor

This page provides the datasheet information for the IPB031NE7N3, a member of the IPB031NE7N3G Power Transistor family.

Datasheet Summary

Features

  • Optimized technology for synchronous rectification.
  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID.
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IPB031NE7N3

Datasheet Details

Part number IPB031NE7N3
Manufacturer Infineon
File Size 245.16 KB
Description Power Transistor
Datasheet download datasheet IPB031NE7N3 Datasheet
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Full PDF Text Transcription

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OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.
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