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IPB034N06N3G
MOSFET
OptiMOSª3Power-Transistor,60V
Features
•forsync.rectification,motor-drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
3.4
mΩ
ID
100
A
D²-PAK7pin
tab 1
7
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB034N06N3 G
Package PG-TO263-7
Marking 034N06N
RelatedLinks -
Final Data Sheet
1
Rev.2.