IPB031NE7N3G - Power-Transistor

Datasheet Summary

Features

Optimized technology for synchronous rectification.
Ideal for high frequency switching and DC/DC converters.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies AG

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Datasheet Details

Part number	IPB031NE7N3G
Manufacturer	Infineon Technologies AG
File Size	245.16 KB
Description	Power-Transistor
Datasheet	IPB031NE7N3G Datasheet
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Full PDF Text Transcription

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IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G Product Summary V DS R DS(on),max ID 75 3.

Published: Feb 17, 2011 |