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IPB03N03LB
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 2.8 80 V mΩ A
PG-TO263-3 PG-TO220-3-1
Type IPB03N03LB
Package P-TO263-3
Marking 03N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation www.DataSheet4U.
IPB03N03LB Datasheet
