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IPB036N12N3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 120 3.6 180 V mΩ A
Type
IPB036N12N3 G
Package Marking
PG-TO263-7 036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature www.DataSheet4U.
IPB036N12N3G Datasheet
