Full PDF Text Transcription for SPD08N50C3 (Reference)
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SPD08N50C3. For precise diagrams, and layout, please refer to the original PDF.
SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS...
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e best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance , available in Halogen free mold compounda) • Fully qualified according to JEDEC for Industrial Applications Type SPD08N50C3 Package PG-TO252 Ordering Code Q67040-S4569 Marking 08N50C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy,
SPD08N50C3 Datasheet
