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SPD01N60C3 - Cool MOS Power Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Full PDF Text Transcription for SPD01N60C3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD01N60C3. For precise diagrams, and layout, please refer to the original PDF.

Rev. 2.0 SPU01N60C3 SPD01N60C3 VDS @ Tjmax RDS(on) ID P-TO252 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Per...

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ew revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 650 6 0.8 V Ω A P-TO251-3-1 Type SPU01N60C3 SPD01N60C3 Package P-TO251-3-1 P-TO252 Ordering Code Q67040-S4193 Q67040-S4188 Marking 01N60C3 01N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.

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Infineon Logo SPD01N60C3 Cool MOS Power Transistor Infineon

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