Full PDF Text Transcription for SPD02N60S5 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SPD02N60S5. For precise diagrams, and layout, please refer to the original PDF.
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effect...
View more extracted text
ge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU02N60S5 SPD02N60S5 VDS RDS(on) ID PG-TO252 600 V 3 Ω 1.8 A PG-TO251 2 3 1 3 2 1 Type SPU02N60S5 SPD02N60S5 Package PG-TO251 PG-TO252 Ordering Code Q67040-S4226 Q67040-S4213 Marking 02N60S5 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.
SPD02N60S5 Datasheet
