Datasheet4U Logo Datasheet4U.com

SPD04N60C2 - Cool MOS Power Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Full PDF Text Transcription for SPD04N60C2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD04N60C2. For precise diagrams, and layout, please refer to the original PDF.

Final data SPD04N60C2 SPU04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extre...

View more extracted text
technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.95 4.5 P-TO252 V Ω A Type SPD04N60C2 SPU04N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4307 Q67040-S4306 Marking 04N60C2 04N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 9 130 0.4 4.5 6 ±20