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SPD08N05L - SIPMOS-R POWER TRANSISTOR

Key Features

  • N channel.
  • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level.
  • Avalanche rated www. DataSheet4U. com.
  • Logic.
  • dv/dt rated.
  • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unles.

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Datasheet Details

Part number SPD08N05L
Manufacturer Infineon
File Size 155.96 KB
Description SIPMOS-R POWER TRANSISTOR
Datasheet download datasheet SPD08N05L Datasheet

Full PDF Text Transcription for SPD08N05L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD08N05L. For precise diagrams, and layout, please refer to the original PDF.

SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 5...

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n-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level • Avalanche rated www.DataSheet4U.com • Logic • dv/dt rated • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.4 5.9 34 35 2.4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.