SPD 08N10
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
100 0.3 8.4
V Ω A
Enhancement mode.
Avalanche rated.
dv/dt rated
Type SPD08N10 SPU08N10
Package P-TO252 P-TO251
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current
Valu.
Full PDF Text Transcription for SPD08N10 (Reference)
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SPD08N10. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current ...
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rce voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.
SPD08N10 Datasheet
