IPP08CNE8NG - Power-Transistor

This page provides the datasheet information for the IPP08CNE8NG, a member of the IPB-08CNE Power-Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPP08CNE8NG
Manufacturer	Infineon
File Size	498.90 KB
Description	Power-Transistor
Datasheet	IPP08CNE8NG Datasheet
Additional preview pages of the IPP08CNE8NG datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 8.

Published: Apr 9, 2008 |