IPP080N03L - N-Channel MOSFET

Datasheet Summary

Features

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Static drain-source on-resistance: RDS(on) ≤8.0mΩ.
Enhancement mode: Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA).
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPP080N03L
Manufacturer	INCHANGE
File Size	241.80 KB
Description	N-Channel MOSFET
Datasheet	IPP080N03L Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode: Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 47 Tj Max.

Published: Oct 2, 2020 |